个人简介
| 最高学位硕士，职称为教授，任硕士生导师，长期从事电力电子与无线电力传输等方向的研究工作。参与自然科学基金项目1项，另主持和参与省部级及横向科研项目10余项。以第一或通迅作者，在国内外学术期刊及会议上发表学术论文30余篇，其中SCI、EI检索论文20篇，获国家专利11项。作为第一编著人出版教材1本。IEEE Transactions on Electron Devices、Electronics Letters审稿人。 |
工作经历
| 曾在成都大唐电信光通信有限公司从事通信设备的研发工作；现于西华大学电气信息学院任教，长期从事电力电子和无线电力传输的研究工作。 |
教育经历
| 四川师范大学物理学院物理教育专业就读本科；电子科技大学通信与信息工程学院攻读硕士学位；在电子科技大学进修3年，研究功率器件与集成电路。 |
研究方向
人工智能（自然语言处理、机器学习）；电磁超材料与天线技术。 |
学术成果
近年来以第一作者或通讯作者发表的部分论文 [1] X. M. Yang, T. Q. Li, et al., “Analysis of the Influence of Silicon-on-insulator Lateral Double-diffused MOS Devices Substrate Deep Depletion on Transient Breakdown Voltage,” IEEE ACCESS, 2020, vol. 8, no. 8, pp. 231-242 (SCI检索:000567241100001) [2] R. C. Deng, X. M. Yang, et al., “Performance enhancement of novel antipodal Vivaldi antenna with irregular spacing distance slots and modified-w-shaped metamaterial loading,” APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2019, vol. 12, no. 1, pp. 125-135 (SCI检索:000452459400003,参与身份：通讯作者、导师) [3] X. M. Yang, T. Q. Li, Y. Cai, Q. X. Qiu, B. Ma and C. J. Chen, “A novel controllable carrier-injection mechanism in high voltage diode for reducing switching loss,” IEICE Electronics Express, 2014, vol. 11, no. 17, pp. 1-8 (SCI检索: 000344925800004) [4] X. M. Yang, T. Q. Li, and Y. Cai, “High Voltage (> 1100V) SOI LDMOS with an Accumulated Charges Layer for Double Enhanced Dielectric Electric Field,” IEICE Electronics Express,2013, vol. 10, no. 4, pp. 1-6(SCI检索:000316989800011) [5] B. Ma, X. M. Yang, T. Q. Li, and C. J. Chen, “Gain and directivity enhancement of microstrip antenna loaded with multiple splits octagon-shaped metamaterial superstrate,” International Journal of Applied Electromagnetics and Mechanics, 2016, vol. 50, no. 4, pp. 201-213 (SCI检索:000368928700016,参与身份：通讯作者、导师) [6] B. Ma, X. M. Yang, T. Q. Li, and C. J. Chen, “Gain enhancement of transmitting antenna incorporatedwith double-cross-shaped electromagnetic metamaterial forwireless power transmission,” Optik, 2016, vol. 127, no. 16, pp. 6754-6762 (SCI检索:000377734100063,参与身份：通讯作者、导师) [7] X. M. Yang, and T. Q. Li,“High voltage buried step-doping p+ layer silicon-on-insulator lateral double diffused mosfet (SOI LDMOSI) with a back-gate,”Int. J. Phys, 2011, vol. 6, no. 22, pp. 5281-5286 [8] X. M. Yang, Y. Cai, and T. Q. Li, “Highly Heat-Dissipating and High-Voltage SOI-LDMOS Power Device,” 2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012 (EI检索: 20130215879666 ) [9] X. M. Yang, Y. Cai, and T. Q. Li, “A new slope SOI-LDMOS high-voltage power device,” 2012 3rd International Conference on Information Technology for Manufacturing Systems, ITMS 2012,(EI检索: 20130115849634 ) [10] X. M. Yang, B. Zhang, and X. R. Luo, “Double enhance dielectric layer electric field high voltage SOI LDMOS,” 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, 2011, (EI检索: 20120414717777)
近年来主持或参与的部分科研项目
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教学工作
主要承担《EDA技术》、《电磁场与波》及《现代数字信号处理》等多门研究生和本科生的教学工作，主持省级教改项目1项，成功申报通信工程专业和级省卓越工程师培养计划。 |
荣誉奖励
校级优秀教学奖1次 |